b,apr,2013 to-220f plastic-encapsulate diodes mbr f3030, 35, 40, 45, 50ct schottky barrier rectifier features z schottky barrier chip z guard ring die construction for transient protection z low power loss,high efficiency z high surge capability z high current capability and low forward voltage drop z for use in low voltage, high fr equency inverters,free wheeling, and polarity protection applications maximum ratings ( t a =25 unless otherwise noted ) value unit symbol parameter mbrf30 30ct mbrf30 35ct mbrf30 40ct mbrf30 45ct mbrf30 50ct v rrm peak repetitive reverse voltage v rwm working peak reverse voltage v r dc blocking voltage 30 35 40 45 50 v v r(rms) rms reverse voltage 21 24.5 28 31.5 35 v i o average rectified output current 30 a i fsm non-repetitive peak forward surge current 8.3ms half sine wave 200 a p d power dissipation 2 w r ja thermal resistance from junction to ambient 50 /w t j junction temperature 125 t stg storage temperature -55~+150 to-220f 1. anode 2. cathode 3. a node tiger electronic co.,ltd
b,apr,2013 electrical characteristics (t a =25 unless otherwise specified) parameter symbol device test conditions min typ max unit mbrf 3030ct 30 mbrf 3035ct 35 mbrf 3040ct 40 mbrf 3045ct 45 reverse voltage v (br) mbrf 3050ct i r =1ma 50 v mbrf 3030ct v r =30v mbrf 3035ct v r =35v mbrf 3040ct v r =40v mbrf 3045ct v r =45v reverse current i r mbrf 3050ct v r =50v 0.2 ma mbrf 3030-45ct 0.7 v f1 mbrf 3050ct i f =15a 0.8 v mbrf 3030-45ct 0.84 forward voltage v f2 * mbrf 3050ct i f =30a 0.95 v mbrf 3030-45ct 450 typical total capacitance c tot * mbrf 3050ct v r =4v,f=1mhz 400 pf *pulse test: pulse width 300 s, duty cycle 2.0%.
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